vishay IL221AT/ 222at/ 223at document number 83617 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 1 i179022 a c nc nc nc b c e 1 2 3 4 8 7 6 5 optocoupler, photodarlington output, low input current, high gain, with base connection features ? isolation test voltage, 3000 v rms industry standard soic-8 surface mountable package standard lead spacing, .05 " available only on tape and reel (conforms to eia standard rs481a) compatible with dual wave, vapor phase and ir reflow soldering agency approvals ul - file no. e52744 system code y din en 60747-5-2(vde0884) din en 60747-5-5 pending available with option 1 fimko description the IL221AT/ il222at/ il223at is a high current transfer ratio (ctr) optocoupler with a gallium ars- enide infrared led emitter and a silicon npn photo- darlington transistor detector. the device has a ctr tested at 1.0 ma led current. this low drive current permits easy interfacing from cmos to lsttl or ttl. this optocoupler is constructed in a standard soic-8 foot print which makes it ideally suited for high density applications. in addition to eliminating through-hole requirements, this package conforms to standards for surface mount devices. order information for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks IL221AT ctr > 100 %, soic-8 il222at ctr > 200 %, soic-8 il223at ctr > 500 %, soic-8 parameter test condition symbol value unit peak reverse voltage v r 6.0 v forward continuous current i f 60 ma power dissipation p diss 90 mw derate linearly from 25c 1.2 mw/c
www.vishay.com 2 document number 83617 rev. 1.4, 20-apr-04 vishay IL221AT/ 222at/ 223at vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 30 v emitter-collector breakdown voltage bv eco 5.0 v collector-base breakdown voltage bv cbo 70 v i cmax dc i cmax dc 50 ma i cmax t < 1.0 ms i cmax 100 mw power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c parameter test condition symbol value unit total package dissipation (at 25 c ambient) (led + detector) p tot 240 mw derate linearly from 25 c 3.2 mw/c storage temperature t stg - 55 to +150 c operating temperature t amb - 55 to +100 c soldering time at 260 c 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 1.0 ma v f 1.0 1.5 v reverse current v r = 6.0 v i r 0.1 100 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 100 abv ceo 30 v emitter-collector breakdown voltage i e = 100 abv eco 5.0 v collector-emitter breakdown voltage i c = 10 abv ceo 70 v collector-emitter capacitance v ce = 10 v c ce 3.4 pf
vishay IL221AT/ 222at/ 223at document number 83617 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit saturation voltage collector- emitter i ce = 0.5 ma v cesat 1.0 v isolation test voltage t = 1.0 sec. v iso 3000 v rms capacitance (input-output) c io 0.5 pf resistance input to output r io 100 g ? parameter test condition part symbol min ty p. max unit dc current transfer ratio i f = 1.0 ma, v ce = 5.0 v IL221AT ctr dc 100 % il222at ctr dc 200 % il223at ctr dc 500 % fig. 1 forward voltage vs. forward current fig. 2 peak led current vs. duty factor, tau iIL221AT_01 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = -55c t a = 100c t a = 25c iIL221AT_02 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10000 1000 100 10 t - led pulse duration - s i f (pk) - peak led current - ma .005 .05 .02 .01 .1 .2 t df = /t duty f .5 fig. 3 normalized ctr cb vs. i f fig. 4 normalized ctr ce vs. led current iIL221AT_03 .1 10 100 3 2 1 0 i f - led current - ma normalized ctrcb normalized to: i f = 1 ma, t a = 25c v cb =10v t a = -20c t a = 25c t a = 50c t a = 70c 0 iIL221AT_04 i f - led current - ma normalized ctrce .1 1 10 100 .1 1 10 100 normalized to: i f = 1 ma, v ce =5v t a = 25c t a = -20c t a = 25c t a = 50c t a = 70c
www.vishay.com 4 document number 83617 rev. 1.4, 20-apr-04 vishay IL221AT/ 222at/ 223at vishay semiconductors fig. 5 ctr cb vs. led current fig. 6 ctr vs. led current fig. 7 collector current vs. led current iIL221AT_05 .1 1 10 100 0.00 0.05 0.10 i f - led current - ma t a = -20c t a = 25c t a = 50c t a = 70c i f /i cb - ctr cb -% iIL221AT_06 .1 1 10 100 0 500 1000 1500 2000 i f -led current - ma v ce =10v t a = -20c t a = 25c t a = 50c t a = 70c ctr ce - current transfer ratio - % iIL221AT_07 t a = -20c t a = 25c t a = 50c t a = 70c .1 1 10 100 1 10 100 1000 i f -led current - ma i ce - collector current - ma v ce =10v fig. 8 photocurrent vs. led current fig. 9 normalized i cb vs. i f fig. 10 switching timing iIL221AT_08 .1 .1 1 10 100 i f - led current - ma i cb - photocurrent - a i cb = -20c i cb = 25c i cb = 50c i cb = 70c iIL221AT_09 .1 1 10 100 .1 1 10 100 1000 i f - led current - ma normalized i cb t a = -20c t a = 25c t a = 50c t a = 70c normalized to: i f = 1 ma, t a = 25c v cb =10v iIL221AT_10 i f t r v o t d t s t f t phl t plh v th = 1.5 v
vishay IL221AT/ 222at/ 223at document number 83617 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) fig. 11 switching schematic iIL221AT_11 v o r l v cc =10v i f =5 ma f=10 khz, df=50% .036 (.91) .014 (.36) .170 (4.32) .045 (1.14) .260 (6.6) r .010 (.13) .050 (1.27) i178003 40 .240 (6.10) .154 .005 (3.91 .13) .050 (1.27) typ. .016 (.41) .192 .005 (4.88 .13) .004 (.10) .008 (.20) lead coplanarity .0015 (.04) max. .015 .002 (.38 .05) .008 (.20) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) pin one id .120 .005 (3.05 .13) c l .021 (.53) 5 max. r.010 (.25) max. .020 .004 (.51 .10) 2 plcs. iso method a
www.vishay.com 6 document number 83617 rev. 1.4, 20-apr-04 vishay IL221AT/ 222at/ 223at vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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